Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy

Citation
I. Suemune et al., Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 546-550
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
221
Year of publication
2000
Pages
546 - 550
Database
ISI
SICI code
0022-0248(200012)221:<546:FOWSAL>2.0.ZU;2-A
Abstract
Wire-like structures are found to form on the GaAsN surfaces. The wire heig hts and intervals are dependent on the N composition and are typically simi lar to 10 and similar to 50 nm, respectively. The wires were facetted with (1 1 n)A crystal planes, where a value of "n" is in the range of 3-9 and is reduced with increasing N composition. Transmission electron microscopic e xamination shows that the lateral compositional modulation is correlated wi th the surface-wire-like structure. The formation mechanism is discussed ba sed on the site-selective N incorporation at the A-steps on the wired surfa ces. (C) 2000 Elsevier Science B.V. All rights reserved.