MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates

Citation
J. Kim et al., MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates, J CRYST GR, 221, 2000, pp. 525-529
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
221
Year of publication
2000
Pages
525 - 529
Database
ISI
SICI code
0022-0248(200012)221:<525:MGAPOP>2.0.ZU;2-2
Abstract
In this paper we present the achievement of high-quality strained InGaAs/Ga As piezoelectric quantum wells embedded in a P-I-N structure which was grow n on a (1 1 1)A GaAs substrate at a single temperature by atmospheric press ure metalorganic vapor-phase epitaxy, The growth conditions and the structu ral and optical properties of a 10-period multi-quantum well structure with an In content of 13% in the wells are presented. High-resolution X-ray dif fractometry studies show good crystalline and interfacial quality. as well as good repeatability of the quantum well parameters. A photoluminescence f ull-width at half-maximum value of 11 meV at 12 K was determined for the pr incipal quantum well interband transition. A monolayer analysis of the prin cipal optical transition, which includes the piezoelectric field, indicates a well width fluctuation of less than +/- 1 monolayer over the 10 quantum well periods. (C) 2000 Published by Elsevier Science B.V.