AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy

Citation
T. Ishido et al., AlAs/GaAs(001) as a template for c-oriented hexagonal GaN grown by metalorganic vapor-phase epitaxy, J CRYST GR, 221, 2000, pp. 280-285
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
221
Year of publication
2000
Pages
280 - 285
Database
ISI
SICI code
0022-0248(200012)221:<280:AAATFC>2.0.ZU;2-L
Abstract
Hexagonal GaN (h-GaN) layers are grown on GaAs(001) nominally singular subs trates with the assistance of thin AlAs layers. It is revealed that the cry stalline phases of GaN depend on the underlying GaAs-AlAs layered structure s; h-GaN can be grown on AlAs thicker than 9 nm, while cubic GaN on AlAs le ss than 9 nm. Furthermore, h-GaN can be grown on 20nm AlAs covered with GaA s thinner than 8 nm. Based on those results, it is proposed that the surfac e electronic structures of the GaAs-AlAs layered structures, rather than th e interface bonds, determine the crystalline orientations and phases of GaN . (C) 2000 Elsevier Science B.V. All rights reserved.