Theoretical model of photostructural changes in glassy semiconductors

Citation
F. Bass et al., Theoretical model of photostructural changes in glassy semiconductors, PHYS LETT A, 278(3), 2000, pp. 165-171
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
0375-9601 → ACNP
Volume
278
Issue
3
Year of publication
2000
Pages
165 - 171
Database
ISI
SICI code
0375-9601(200012)278:3<165:TMOPCI>2.0.ZU;2-C
Abstract
A theoretical model is proposed which is able to describe the mechanism of photostructural changes in glassy semiconductors, involving negative-U cent ers as basic charge carriers, of which the electronic states are excited by gap light. This answers the old question of why such changes are only foun d in glassy semiconductors: negative-U centers are present only in these ma terials. The theory permits the calculation of the related quantum-mechanic al transition probabilities. (C) 2000 Elsevier Science B.V. All rights rese rved.