Critical thickness of BaSnO3 buffer layer for YBa2Cu3O7-delta thin films on MgO substrates

Citation
K. Chiba et al., Critical thickness of BaSnO3 buffer layer for YBa2Cu3O7-delta thin films on MgO substrates, PHYSICA C, 349(1-2), 2001, pp. 35-39
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
0921-4534 → ACNP
Volume
349
Issue
1-2
Year of publication
2001
Pages
35 - 39
Database
ISI
SICI code
0921-4534(20010101)349:1-2<35:CTOBBL>2.0.ZU;2-T
Abstract
The critical thickness of BaSnO3 (BSO) buffer layer for YBa2Cu3O7-delta (YB CO) thin films on MgO substrate is discussed from viewpoints of the in-plan e orientation and critical temperature. Thin films are grown by changing th e thickness of BSO buffer layers at optimal growth temperature of YBCO film s by pulse laser deposition. We are able to control the in-plane orientatio n of YBCO films with the BSO buffer layers thicker than 2 nm. This result i ndicates that BSO buffer layers can control the in-plane orientation of YBC O with a thickness less than the other buffer materials reported so far. (C ) 2001 Elsevier Science B.V. All rights reserved.