Prototype sensors for the ATLAS silicon pixel detector have been developed.
The design of the sensors is guided by the need to operate them in the sev
ere LHC radiation environment at up to several hundred volts while maintain
ing a good signal-to-noise ratio, small cell size, and minimal multiple sca
ttering. The ability to be operated under full bias for electrical characte
rization prior to attachment of the readout integrated circuit electronics
is also desired. (C) 2001 Elsevier Science B.V. All rights reserved.