Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate

Citation
C. Niikura et al., Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate, SOL EN MAT, 66(1-4), 2001, pp. 421-429
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
0927-0248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
421 - 429
Database
ISI
SICI code
0927-0248(200102)66:1-4<421:MSFDBH>2.0.ZU;2-J
Abstract
The structural and electronic properties of undoped microcrystalline silico n (muc-Si:H) thin films prepared by hot-wire chemical vapor deposition (HWC VD) at various hydrogen dilutions have been studied. UV-visible ellipsometr y was used to quantify the crystalline, amorphous and void fractions, and t o determine the presence, or otherwise, of an amorphous incubation layer. D iffusion-induced time-resolved microwave conductivity measurements showed t hat the electronic transport along the growth direction is notably improved for samples prepared by a double-dilution process, where the H, dilution i s decreased as a function of the deposition time. These results should be u seful for further HWCVD muc-Si:H solar cells. (C) 2001 Published by Elsevie r Science B.V. All rights reserved.