Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

Citation
A. Masuda et al., Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition, SOL EN MAT, 66(1-4), 2001, pp. 259-265
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
0927-0248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
259 - 265
Database
ISI
SICI code
0927-0248(200102)66:1-4<259:DPDDDI>2.0.ZU;2-J
Abstract
It is found that one of the dominant parameters in determining the dangling -bond (DB) density in hydrogenated amorphous silicon (a-Si:H) films prepare d by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire C VD, is the catalyzer-surface area. a-Si:H films with an initial DB density of 4x10(15)cm(-3) and a saturated one after light soaking of 3x10(16)cm(-3) are prepared by Cat-CVD with a deposition rate of 11 Angstrom /s. "Catalyt ic plate" instead of the conventional wire is also proposed in order to sup press the heat radiation from the catalyzer while keeping the catalyzer sur face area constant. (C) 2001 Elsevier Science B.V. All rights reserved.