Enhancement of the characteristic X-ray yield from oriented crystal irradiated by high-energy electrons

Citation
M. Andreyashkin et al., Enhancement of the characteristic X-ray yield from oriented crystal irradiated by high-energy electrons, NUCL INST B, 173(1-2), 2001, pp. 142-148
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168-583X → ACNP
Volume
173
Issue
1-2
Year of publication
2001
Pages
142 - 148
Database
ISI
SICI code
0168-583X(200101)173:1-2<142:EOTCXY>2.0.ZU;2-J
Abstract
In this report, results of a measurement of characteristic X-ray (CXR) yiel ds from oriented tungsten crystal targets irradiated by 600-1000 MeV electr ons are presented. Characteristic X-rays from tungsten are measured with a Si(Li) semiconductor detector placed at the backward direction with respect to the incident electron beam. We have observed an enhancement of the X-ra y yield due to the K-shell ionization when the crystal axis [1 1 1] is orie nted along the beam. The ratio of the K-line yield from the oriented crysta l to the one from the disoriented crystal is about 1.6-1.9 for the target t hickness of 1.2 mm at the electron energy of 1000 MeV, For L-line yields th e enhancement is not appreciable, We demonstrated a possibility of using th e orientation dependence of the CXR as a mean of aligning the crystal axis at the channeling condition to the beam. (C) 2001 Elsevier Science B.V. All rights reserved.