Adhesion of benzocyclobutene-passivated silicon in epoxy layered structures

Citation
Rj. Hohlfelder et al., Adhesion of benzocyclobutene-passivated silicon in epoxy layered structures, J MATER RES, 16(1), 2001, pp. 243-255
Citations number
45
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
0884-2914 → ACNP
Volume
16
Issue
1
Year of publication
2001
Pages
243 - 255
Database
ISI
SICI code
0884-2914(200101)16:1<243:AOBSIE>2.0.ZU;2-N
Abstract
Adhesion and subcritical debonding at interfaces between a silica-filled ep oxy underfill and a silicon die passivated by silicon nitride and benzocycl obutene (BCB) layers were investigated. Adhesion was measured in terms of a critical value of the applied strain energy release rate, G (J/m(2)). Subc ritical debond-growth rates in the range of 10(-9) to 10(-3) m/s:were chara cterized as a function of applied G. Adhesion and subcritical debonding wer e affected by changes in interfacial chemistry and environment. The surpris ingly large effect of adjacent layer elastic properties on interfacial adhe sion was demonstrated with simulations of interfacial fracture using a mech anics of materials approach, Interfacial chemistry was modified by using di fferent adhesion promoters, by varying the BCB cure state, and by using dif ferent epoxy underfill resins. The effects of environmental variables were studied with temperature- and humidity-controlled environments in order to determine the separate roles of moisture activity and temperature.