Fabrication of carbon-based field emitters using stamp technology

Citation
A. Baba et al., Fabrication of carbon-based field emitters using stamp technology, JPN J A P 1, 38(12B), 1999, pp. 7203-7207
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
12B
Year of publication
1999
Pages
7203 - 7207
Database
ISI
SICI code
0021-4922(199912)38:12B<7203:FOCFEU>2.0.ZU;2-W
Abstract
We propose and demonstrate stamp technology, a novel processing technique f or a field electron emitter, in which emitter tips are fabricated by pressi ng a mold into a spin-coated organic material to completely transform the s hape of the mold. The material is then modified by ion irradiation to produ ce a carbon-based emitter material. Starting materials tested were a high-t emperature-cured polyimide and a photoresist (novolac resin). The shape of the mold can be completely transferred to these materials at pressure over 700 MPa at 250 degreesC. A held-emission current up to the order of muA is obtained from emitters fabricated by this new technology with modification using Ar-ion irradiation at an energy of 100keV to a dose of 3 x 10(16) cm( -2). The ion-beam-irradiation effect on polyimide and photoresist materials is also investigated in terms of electrical conductivity and chemical bond s.