Asymmetrical coupling double quantum well intermixing induced by combinatorial proton implantation

Citation
Zl. Miao et al., Asymmetrical coupling double quantum well intermixing induced by combinatorial proton implantation, ACT PHY C E, 50(1), 2001, pp. 116-119
Citations number
18
Language
CHINESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
1000-3290 → ACNP
Volume
50
Issue
1
Year of publication
2001
Pages
116 - 119
Database
ISI
SICI code
1000-3290(200101)50:1<116:ACDQWI>2.0.ZU;2-S
Abstract
With combinatorial proton implantation, we obtained several areas with diff erent implantation doses in single wafer of GaAs/AlGaAs asymmetry coupling double quantum well grown by MBE, and studied the optical characteristics w ith photoluminescence (PL) and photo-modulated reflectance(PR). Without rap id thermal annealing, maximum transition energy shift 81 meV was obtained i n single wafer. The diffusion lengths of Al component calculated from error function were larger than that calculated from coefficient of diffusion fo rmula. The interface effect of double quantum well is sensitive to proton i mplantation.