Carrier distribution profiles in Si-doped layers in GaAs formed by focusedion beam implantation and successive overlayer growth

Citation
T. Hada et al., Carrier distribution profiles in Si-doped layers in GaAs formed by focusedion beam implantation and successive overlayer growth, J VAC SCI B, 18(6), 2000, pp. 3158-3161
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3158 - 3161
Database
ISI
SICI code
1071-1023(200011/12)18:6<3158:CDPISL>2.0.ZU;2-T
Abstract
Selectively doped layers buried in GaAs were formed by low (50 and 200 eV) and high (30 keV) energy focused Si ion implantation and successive overlay er growth using a focused ion beam/ molecular beam epitaxy (MBE) combined s ystem to investigate the possibility to form patterned delta -doped layers. Carrier distribution profiles were measured by means of a capacitance-volt age profiling technique at room temperature. It was found for the low-energ y implantation that the width of the depth profiles of the carrier distribu tion decreased with increasing sheet carrier density and was roughly in agr eement with a theoretical estimation obtained by solving the Poisson equati on. The width was decreased when the sheet carrier density increased by ann ealing. This indicates that the width is determined by a sheet carrier dens ity and not by Si dopant profiles, and that narrower carrier profiles can b e formed by optimizing annealing parameters, although the widths were 2-5 t imes wider than those observed for the MBE-grown delta -doped GaAs. The sam e doping efficiency as for the low-energy implantation was achieved but the distribution width was close to that of the dopant distribution. (C) 2000 American Vacuum Society. [S0734-211X(00)06206-5].