Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method

Citation
M. Yoshizawa et S. Moriya, Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method, J VAC SCI B, 18(6), 2000, pp. 3105-3110
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
3105 - 3110
Database
ISI
SICI code
1071-1023(200011/12)18:6<3105:QFAORL>2.0.ZU;2-P
Abstract
Various factors influencing the resolution limit (RL) in electron beam (EB) lithography have been analyzed quantitatively using the edge roughness eva luation (ERE) method. The ERE method is based on the experimental finding t hat line edge roughness of a resist pattern is inversely proportional to th e slope of the Gaussian-distributed quasi-beam-profile (QBP). The analysis reveals that beam blur and development process are primary factors of RL, t hat electron forward scattering is negligible with the resist thickness und er 200 nm, and that the effect of aperture degradation on RL is as large as that of resist performance. A necessary and sufficient condition for reali zing 50 nm patterns is following. Use of EB lithography instruments of whic h beam blur is under 31 nm, resist thickness of 200 nm, and 20% improvement of the resist performance accompanying optimum development condition. (C) 2000 American Vacuum Society. [S0734-211X(00)09806-1].