Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process

Citation
T. Tsutsumi et al., Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process, J VAC SCI B, 18(6), 2000, pp. 2640-2645
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
2640 - 2645
Database
ISI
SICI code
1071-1023(200011/12)18:6<2640:FTOASN>2.0.ZU;2-6
Abstract
We report on a novel fabrication technology of a Si nanowire memory transis tor using an inorganic SiO2 electron beam (EB) resist process. The inorgani c EB resist process technique was put to practical use in Si nanodevice fab rication for the first time. We have successfully demonstrated the 15-nm-wi de and 20-nm-thick Si nanowire memory transistor with a Si nanodot less tha n 10 nm in diameter. In the fabricated Si nanowire nanodot memory transisto r, we have observed a large electron memory effect, i.e., a threshold volta ge shift DeltaV(th) of 2.2 V at room temperature. It is experimentally show n that the inorganic EB resist process is promising for fabricating various Si nanodevices. (C) 2000 American Vacuum Society. [S0734-211X(00)03306-0].