T. Tsutsumi et al., Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process, J VAC SCI B, 18(6), 2000, pp. 2640-2645
We report on a novel fabrication technology of a Si nanowire memory transis
tor using an inorganic SiO2 electron beam (EB) resist process. The inorgani
c EB resist process technique was put to practical use in Si nanodevice fab
rication for the first time. We have successfully demonstrated the 15-nm-wi
de and 20-nm-thick Si nanowire memory transistor with a Si nanodot less tha
n 10 nm in diameter. In the fabricated Si nanowire nanodot memory transisto
r, we have observed a large electron memory effect, i.e., a threshold volta
ge shift DeltaV(th) of 2.2 V at room temperature. It is experimentally show
n that the inorganic EB resist process is promising for fabricating various
Si nanodevices. (C) 2000 American Vacuum Society. [S0734-211X(00)03306-0].