Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer

Citation
Ci. Park et al., Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer, J KOR PHYS, 37(6), 2000, pp. 1007-1011
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
37
Issue
6
Year of publication
2000
Pages
1007 - 1011
Database
ISI
SICI code
0374-4884(200012)37:6<1007:EOABLO>2.0.ZU;2-Z
Abstract
The metalorganic chemical-vapor deposition growth of GaN films on 3C SIC in termediate lavers on Si(111) substrates was carried out using trimethylgall ium and NH3. Single crystalline hexagonal GaN layers were grown successfull y on Si-terminated SiC intermediate layers by using GaN, AlN, and a superla ttice buffer layer. The surface morphology, the crystal quality, and the op tical properties of the GaN film with a superlattice as a buffer layer were extremely improved. The GaN films were characterized by using X-ray diffra ction, photoluminescence, optical microscopy, scanning electron microscopy, and atomic force microscopy. The minimum full widths at half maximun of th e bound exiton peak was 20.39 meV at 5 K and 63.03 meV at 300 K. Also the r oot-mean-square roughness of the GaN film grown under optimum growth condit ions was only 4.21 A.