Ultrashallow P+/N junction formation by plasma ion implantation

Citation
Sk. Baek et al., Ultrashallow P+/N junction formation by plasma ion implantation, J KOR PHYS, 37(6), 2000, pp. 912-914
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
37
Issue
6
Year of publication
2000
Pages
912 - 914
Database
ISI
SICI code
0374-4884(200012)37:6<912:UPJFBP>2.0.ZU;2-M
Abstract
We investigated the electrical characteristics and the junction depth of ul tra-shallow junctions formed by using the plasma-doping method. Compared wi th ultra-low energy boron-ion implantation at 500 eV, the junctions formed with the plasma-doping process exhibited shallow junction depths and low sh eet resistances. The junction depths of the plasma-doped samples were 150 A ngstrom and 330 A after annealing for 10s at 900 degreesC, respectively. Fo r the same junction depth, the sheet resistance of the B2H6 plasma-doped sa mple wa an oder of magnitude less than that of the 500-eV B-ion implanted s ample. Cross-sectional transmission electron microscopy and deep level tran sient spectroscopy showed that the defects formed by the B2H6 plasma-doping process could be removed by annealing at 950 degreesC for 10 s. The scalin g of metal-oxide-semiconductor field-effect-transistor (MOSFET) device chan nel lengths for high-speed application requires the scaling down to 30 simi lar to 40 nm for next-generation 0.1-mum MOSFET devices [1]. Compared with n(+)/p junction, it is difficult to form an ultra-shallow p(+)/n junction d ue to boron channeling and to transient-enhanced diffusion related to extra interstitials generated during the implantation method is considered as a good candidate for achieving ultra-shallow junction profiles because of its ultra-low energy, high throughput and room temperature operation [4]. If p lasma doping at an energy level of 100 eV used, the locations of defects ge nerated by plasma implantation are very close to the Si surface. It is know n that the Si surface is an efficient sink for the removal of point defects . Therefore, we expect the transient-enhanced diffusion for a plasma doping process to be almost negligible. In this study, we investigated the charac teristics of an ultra-shallow junction formed by plasma ion implantation as an alternative to the ion-implantation process.