Electrical characteristics of a lateral field emission array for display applications

Citation
Jh. Lee et al., Electrical characteristics of a lateral field emission array for display applications, J KOR PHYS, 37(6), 2000, pp. 850-853
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
37
Issue
6
Year of publication
2000
Pages
850 - 853
Database
ISI
SICI code
0374-4884(200012)37:6<850:ECOALF>2.0.ZU;2-O
Abstract
We proposed and investigated the characteristics of a lateral field emissio n array (LFEA) structure with polycrystalline silicon emitters using the LO GOS (local oxidation of polysilicon) process for display applications. We f abricated an LFEA device which had a 600x600 mum(2) pixel with 28 cathode t ips and 56 gate tips. It showed a very low turn-on voltage of about 8 V and a quite high emission current of 424 muA/pixel at a substrate-to-cathode v oltage of 40 V and V-GC=0 V. Ii phosphor arrayed anode ITO glass is aligned with the LFEA, which is selectively etched through for an electron path, t he LEFA will be highly applicable as a field emission display with many adv antages, such as simple process, easy distance control between the anode an d the cathode, and low process cost.