Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film

Citation
Wc. Lai et al., Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film, JPN J A P 2, 39(11B), 2000, pp. L1138-L1140
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
11B
Year of publication
2000
Pages
L1138 - L1140
Database
ISI
SICI code
0021-4922(20001115)39:11B<L1138:OAECOC>2.0.ZU;2-T
Abstract
This work investigates the optical and electrical characteristics of CO2-la ser annealed Mg-doped GaN films to activate Mg-doped p-type GaN films. Resu lts obtained from the CO2 laser annealing investigation were similar to tho se of thermal annealing or low energy electron beam irradiation (LEEBI) tre atment to activate the Mg-doped p-GaN films. The room-temperature photolumi nescence (PL) intensity of the blue emission of the Mg-doped GaN him after 10 W laser annealing was approximately ten times stronger than that of the as-grown film. The resistivity of the Mg-doped GaN him decreased from 10(5) Omega .cm to 2-3 Omega .cm as the laser annealing power rose above 6 W. Th e hole concentration of Mg-doped GaN film was approximately 1 x 10(17) cm(- 3) when the laser annealing power was 7.5 W.