(110)-oriented GaInAsP quantum-well (QW) lasers have been fabricated to inv
estigate growth direction effects of the QW structure on laser performance.
Large in-plane anisotropic threshold current densities in the lasers were
observed between the  and [1 (1) over bar0] cavity directions of the (
110)-oriented QW structure lasers. This large anisotropy is able to be ascr
ibed to a stronger oscillator strength for [1 (1) over bar0]-polarized ligh
t. Fairly low threshold current densities of less than 0.6 kA/cm(2) were ob
tained for the lasers with cavities along  direction in spite of the l
ower reflectivity of the reactive ion etching etched mirror surface. (C) 20
00 American Institute of Physics. [S0003-6951(01)01801-0].