Current-induced optical effect in porous silicon Fabry-Perot resonators

Citation
M. Takahashi et al., Current-induced optical effect in porous silicon Fabry-Perot resonators, PHYS ST S-A, 182(1), 2000, pp. 567-571
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
0031-8965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
567 - 571
Database
ISI
SICI code
0031-8965(200011)182:1<567:COEIPS>2.0.ZU;2-5
Abstract
The refractive index of porous silicon (PS) was changed by electrical injec ted carriers in PS-based Fabry-Perot resonator (PS-FPR) diodes. According t o measurements of time evolution, there are fast (millisecond order) and sl ow (several seconds or der) components in the refractive: index change. Thi s phenomenon can be well explained by a theoretical estimation based on a m odel of carrier injection and subsequent accumulation. The maximum value of the relative refractive index change is about 0.1% at a diode current dens ity of 40 mA/cm(2). These results indicate further technological potential of FS fur silicon-based opto-electronic devices.