Photoluminescence of rapid thermal treated porous Si in nitrogen atmosphere

Authors
Citation
K. Kimoto et T. Arai, Photoluminescence of rapid thermal treated porous Si in nitrogen atmosphere, PHYS ST S-A, 182(1), 2000, pp. 133-137
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
0031-8965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
133 - 137
Database
ISI
SICI code
0031-8965(200011)182:1<133:PORTTP>2.0.ZU;2-5
Abstract
Rapid thermal treatment of porous Si in nitrogen atmosphere has been perfor med to investigate the origin of the visible photoluminescence, and to stab ilize the luminescence intensity of porous Si. After the rapid thermal trea tment of as-anodized porous Si, the peak energy of PL spectrum of the rapid thermal treated poll,us Si shifts from 1.9 eV (red band) to 2.23 eV (green band), and no degradation of the peak intensity at 2.23 eV is observed. In frared absorption measurements reveal that hydrogen is almost completely re moved from the porous layer. It is also shown by X-ray photoelectron spectr oscopy measurements that nitrogen is incorporated into the porous layer for ming Si-N and N-O bonds. Raman spectroscopy measurements show that the rapi d thermal annealing leads to a wide distribution in the size of nanocrystal line Si, which is supposed to be the cause of the broad green band.