Anomalous diffusion of boron in silicon driven under the N2O ambient

Citation
Dg. Liu et al., Anomalous diffusion of boron in silicon driven under the N2O ambient, IEEE ELEC D, 21(12), 2000, pp. 572-574
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
21
Issue
12
Year of publication
2000
Pages
572 - 574
Database
ISI
SICI code
0741-3106(200012)21:12<572:ADOBIS>2.0.ZU;2-N
Abstract
In this letter p(+)/n junctions formed by a solid source of a boron-doped l ayer under different ambient gases sill be demonstrated, In this study, it mas found that the obtained junction depth depends strongly on the ambient gas. Especially in the N2O ambient, the diffusion of boron is enormously en hanced, The resulting junction depth can be as high as eight times of those junctions formed in N-2. Such phenomenon is much more profound than the we ll-known oxidation-enhanced diffusion (OED) effect of O-2. We call this new effect as the nitri-oxidation-enhanced diffusion: (NOED) effect. As a cons equence, it is proposed that the NOED effect is instrumental for low-cost f abrication of well structures in the CMOS technology.