Integration of GaN with Si using a AuGe-mediated wafer bonding technique

Citation
M. Funato et al., Integration of GaN with Si using a AuGe-mediated wafer bonding technique, APPL PHYS L, 77(24), 2000, pp. 3959-3961
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
77
Issue
24
Year of publication
2000
Pages
3959 - 3961
Database
ISI
SICI code
0003-6951(200012)77:24<3959:IOGWSU>2.0.ZU;2-5
Abstract
This letter describes integration of GaN with Si using a AuGe alloy as a bo nding material. GaN is first grown on GaAs and then GaN/GaAs/AuGe/Si and Ga As/GaN/AuGe/Si structures are fabricated by wafer bonding. For the latter s tructure, the GaAs substrate is removed by mechanical and chemical etching. From the current-voltage measurements of both structures, it is found that the bonded interfaces do not obstruct the carrier transport. Furthermore, the optical reflection measurements reveal that AuGe works well as a mirror , which is a suitable characteristic for the integration of GaN light-emitt ing devices with Si. (C) 2000 American Institute of Physics. [S0003-6951(00 )03750-5].