SEM study of fluorocarbon films by RF sputtering PTFE targets on PET substrates

Citation
Hj. Qi et al., SEM study of fluorocarbon films by RF sputtering PTFE targets on PET substrates, SURF COAT, 131(1-3), 2000, pp. 177-180
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science & Engineering
Journal title
SURFACE & COATINGS TECHNOLOGY
ISSN journal
0257-8972 → ACNP
Volume
131
Issue
1-3
Year of publication
2000
Pages
177 - 180
Database
ISI
SICI code
0257-8972(20000901)131:1-3<177:SSOFFB>2.0.ZU;2-5
Abstract
The R.F. sputtering technique was used for developing a novel waterproof an d breathable fabric. In this paper, as the first step, fluorocarbon films w ere deposited by R.F, sputtering PTFE targets on PET substrates. At the ear ly stage, the surface microstructure of these films obtained at various ene rgies was examined. It was found by SEM that some segregated grains deposit ed on the PET substrates tended to be finer, closer, more uniform and more round with increasing energy. The explanation seems to be that the critical size decreased, the activation point on substrate increased, and the grain destruction was promoted with increasing power. The surface microstructure of these films, obtained with a power of 800 W, for various deposition tim es was observed. The typical deposited film consisted of several semi-conti nuous sublayers by three-dimensional (3-D) island growth mode. However, the growth by 3-D mode seems to be not thorough: the end structure of every su blayer was semi-continuous and consisted of numerous lying silkworm-like is lands (of the order of 100 nm) joining each other. As a whole, the film oth er than the monolayer grew sublayer by sublayer and finally formed a three- dimensional network structure. When the underlayer grew, some grains of the next several sublayers on it had deposited gradually and started to grow. For every sublayer, once the coverage reached 50-70% the sublayer no longer continued to grow. (C) 2000 Elsevier Science B.V. All rights reserved.