ELECTRICAL AND OPTICAL BISTABILITY IN INXGA1-XAS-GAAS PIEZOELECTRIC QUANTUM-WELLS

Citation
Lr. Wilson et al., ELECTRICAL AND OPTICAL BISTABILITY IN INXGA1-XAS-GAAS PIEZOELECTRIC QUANTUM-WELLS, Physical review. B, Condensed matter, 55(24), 1997, pp. 16045-16048
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
0163-1829
Volume
55
Issue
24
Year of publication
1997
Pages
16045 - 16048
Database
ISI
SICI code
0163-1829(1997)55:24<16045:EAOBII>2.0.ZU;2-0
Abstract
Optically induced bistability in the electrical and optical characteri stics of a (111)B piezoelectric, strained In0.15Ga0.85As-GaAs single-q uantum-well p-i-n structure is reported. We demonstrate that the bista bility results from photoinduced electron charge buildup in the quantu m well. Charge buildup is enhanced relative to a (100) structure as a consequence of the modified band profile due to the large internal pie zoelectric field. A region of hysteresis is observed in the current-vo ltage characteristics under illumination, with the device being stable in either low- or high-current states. Photoluminescence line-shape a nalysis and magnetophotoluminescence studies demonstrate that the low- and high-current states correspond to either high or near-zero electr on charge (n(s)) in the well, respectively. Simulations of the band pr ofiles using the deduced values of n(s) are consistent with the existe nce of the two different current and charge accumulation states.