Estimation of the TEOS dissociation coefficient by electron impact

Citation
C. Vallee et al., Estimation of the TEOS dissociation coefficient by electron impact, J VAC SCI A, 18(6), 2000, pp. 2728-2732
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
0734-2101 → ACNP
Volume
18
Issue
6
Year of publication
2000
Pages
2728 - 2732
Database
ISI
SICI code
0734-2101(200011/12)18:6<2728:EOTTDC>2.0.ZU;2-L
Abstract
SiO2-like films are deposited in a low-pressure rf helicon reactor using ox ygen-rich O-2/TEOS (tetraethoxysilane) mixtures. A model based on the depos ition rate variation with the distance to the TEOS injection is used to est imate the TEOS electron-impact dissociation coefficient k(e) and the effect ive sticking coefficient of reactive fragments s. In the helicon diffusion chamber where the electron temperature and density are about 4 eV and 10(10 ) cm(-3), respectively, k(e) and s are found to be 1.82 X 10(-7) cm(3) s(-1 ) and 0.035, respectively. Under these low-pressure plasma conditions, the TEOS dissociation by electron impact is dominant over dissociation by oxyge n atoms. (C) 2000 American Vacuum Society. [S0734-2101(00)05506-8].