Growth kinetics of GaN thin films grown by OMVPE using single source precursors

Citation
Ra. Fischer et al., Growth kinetics of GaN thin films grown by OMVPE using single source precursors, MRS I J N S, 5, 2000, pp. NIL_136-NIL_141
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
ISSN journal
1092-5783 → ACNP
Volume
5
Year of publication
2000
Supplement
1
Pages
NIL_136 - NIL_141
Database
ISI
SICI code
1092-5783(2000)5:<NIL_136:GKOGTF>2.0.ZU;2-F
Abstract
We report the growth kinetics of GaN thin films using the single source pre cursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wail reactor . Transparent, smooth, epitaxial (FWHM of the alpha -GaN 0002 rocking curve = 129.6 arcsec) and stoichiometric GaN films were grown on c-plane Al2O3 s ubstrates in the temperature range of 870 - 1320K and high growth rates wer e obtained (up to 4000 nm/hr). Film growth was studied as a function of sub strate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as ammo nia, we have investigated the effect of ammonia on the growth and propertie s of the resulting films. The films obtained were characterized by XRD, RES , XPS. AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the correct near band edge luminescence at 3.45 eV.