Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching

Citation
T. Ichimori et al., Proton channeling into the Si substrate at the bottom of ultrahigh-aspect-ratio contact holes during plasma etching, THIN SOL FI, 374(2), 2000, pp. 228-234
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
374
Issue
2
Year of publication
2000
Pages
228 - 234
Database
ISI
SICI code
0040-6090(20001017)374:2<228:PCITSS>2.0.ZU;2-U
Abstract
Etching-induced physical damage at the bottom of ultrahigh-aspect-ratio con tact holes was investigated by transmission electron microscopy, and a char acteristic hemispherical lattice disorder was discovered in the Si substrat e. Depth profiles of impurities in this disordered region were analyzed by secondary ion mass spectrometry, and it was found that this phenomenon is c haracteristic only for hydrogen-containing plasma. The mechanism of such da mage formation is explained by proton (H+) channeling into the substrate at the ultrahigh-aspect-ratio contact hole bottom. (C) 2000 Elsevier Science S.A. All rights reserved.