Investigation of crystallographic and pyroelectric properties of lead-based perovskite-type structure ferroelectric thin films

Citation
C. Shi et al., Investigation of crystallographic and pyroelectric properties of lead-based perovskite-type structure ferroelectric thin films, THIN SOL FI, 375(1-2), 2000, pp. 288-291
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
375
Issue
1-2
Year of publication
2000
Pages
288 - 291
Database
ISI
SICI code
0040-6090(20001031)375:1-2<288:IOCAPP>2.0.ZU;2-M
Abstract
Epitaxially grown and polycrystalline PbTiO3 (PT), (Pb, La)TiO3 (PLT) and P b(Zr, Ti)O-3 (PZT) thin films with thicknesses from I to 2 mum have been pr epared on Pt/Ti/SiO2/Si substrates by means of a sol-gel spin-coating techn ique. The ferroelectric thin films have good crystallization behavior, exce llent dielectric and pyroelectric properties. The pyroelectric coefficients of PT, PLT and PZT thin films are 2.9 x 10(-8) c/cm(2).k, (3.37-5.25)x 10( -8) c/cm(2).k and 6.10 x 10(-8) c/cm(2).k, respectively. The figures of mer it for voltage responsivity of PT, PLT and PZT thin films are 0.60 x 10(-10 ) C cm/J, (0.59-0.78) x 10(-10) C cm/J and 0.63 x 10(-10) C cm/J, respectiv ely. The current responsivity of these films are 9.0 x 10(-9) C cm/J, (10.5 -16.0) x 10(-9) C cm/J and 19.1 x 10(-9) C cm/J, and the detectivity are 0. 74 x 10(-8) C cm/J, (0.79-1.13)x 10(-8) C cm/J and 0.83 x 10(-8) C cm/J, re spectively. (C) 2000 Elsevier Science S.A. AU rights reserved.