We demonstrate the epitaxial growth of silicon with ion assisted deposition
on pyramidally structured porous silicon and investigate the microstructur
e of the epitaxial layer with transmission electron microscopy. The major d
efects in the grown pyramid structure are stacking faults on the {1 1 1} fa
cets of the pyramids, whereas the epitaxial layers on the {0 0 1} facets ar
e defect-free. The stacking fault density decreases by about three orders w
ith increasing the deposition temperature from 600 to 850 degreesC, but is
constant when the ion energy changes. Depending on growth conditions Si-int
erstitials are built into the layers, which during electron microscopy form
so called rod-like defects. (C) 2001 Elsevier Science B.V. All rights rese
rved.