Microstructure of epitaxial layers deposited on silicon by ion assisted deposition

Citation
J. Krinke et al., Microstructure of epitaxial layers deposited on silicon by ion assisted deposition, SOL EN MAT, 65(1-4), 2001, pp. 503-508
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
0927-0248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
503 - 508
Database
ISI
SICI code
0927-0248(200101)65:1-4<503:MOELDO>2.0.ZU;2-T
Abstract
We demonstrate the epitaxial growth of silicon with ion assisted deposition on pyramidally structured porous silicon and investigate the microstructur e of the epitaxial layer with transmission electron microscopy. The major d efects in the grown pyramid structure are stacking faults on the {1 1 1} fa cets of the pyramids, whereas the epitaxial layers on the {0 0 1} facets ar e defect-free. The stacking fault density decreases by about three orders w ith increasing the deposition temperature from 600 to 850 degreesC, but is constant when the ion energy changes. Depending on growth conditions Si-int erstitials are built into the layers, which during electron microscopy form so called rod-like defects. (C) 2001 Elsevier Science B.V. All rights rese rved.