Suppression of substrate distortion during zone-melting recrystallization process for thin film silicon solar cells

Citation
K. Imada et al., Suppression of substrate distortion during zone-melting recrystallization process for thin film silicon solar cells, SOL EN MAT, 65(1-4), 2001, pp. 423-427
Citations number
2
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
0927-0248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
423 - 427
Database
ISI
SICI code
0927-0248(200101)65:1-4<423:SOSDDZ>2.0.ZU;2-W
Abstract
The distortion of silicon substrate during zone-melting recrystallization ( ZMR) process was investigated by thermal simulation and zone heating repeti tion. From the simulation result, the distortion becomes small with increas ing T-g and it disappears when T-s is set above 1350 degreesC. From zone he ating repetition, the reduction of the distortion was confirmed by higher T -s experiment. When T-g is 1340 degreesC the substrate is expected to be re used 20 times. When a substrate of thickness more than 1.5 mm is used in th is high-T-g Z M R process, reuse number of times can be estimated as more t han 100 times. (C) 2001 Elsevier Science B.V. All rights reserved.