The Via-hole Etching for the Separation of Thin films (VEST) process has be
en developed based on SOI technology of zone-melting recrystallization (ZMR
). In order to obtain high-quality thin-film polycrystalline Si, it was fou
nd that the thickness of recrystallized Si film is an important factor. On
the other hand, we have newly investigated the module process for the VEST
cells. As a result, we have achieved 13.1% efficiency (V-oc: 5.257 V, I-sc:
3.43 A, FF:0.6695) with a module size of 924.2cm(2). (C) 2001 Elsevier Sci
ence B.V. All rights reserved.