Development of high-efficiency thin-film Si solar cells using zone-meltingrecrystallization

Citation
H. Morikawa et al., Development of high-efficiency thin-film Si solar cells using zone-meltingrecrystallization, SOL EN MAT, 65(1-4), 2001, pp. 261-268
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
0927-0248 → ACNP
Volume
65
Issue
1-4
Year of publication
2001
Pages
261 - 268
Database
ISI
SICI code
0927-0248(200101)65:1-4<261:DOHTSS>2.0.ZU;2-8
Abstract
The Via-hole Etching for the Separation of Thin films (VEST) process has be en developed based on SOI technology of zone-melting recrystallization (ZMR ). In order to obtain high-quality thin-film polycrystalline Si, it was fou nd that the thickness of recrystallized Si film is an important factor. On the other hand, we have newly investigated the module process for the VEST cells. As a result, we have achieved 13.1% efficiency (V-oc: 5.257 V, I-sc: 3.43 A, FF:0.6695) with a module size of 924.2cm(2). (C) 2001 Elsevier Sci ence B.V. All rights reserved.