Hot electron transport in AlN

Citation
R. Collazo et al., Hot electron transport in AlN, J APPL PHYS, 88(10), 2000, pp. 5865-5869
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
88
Issue
10
Year of publication
2000
Pages
5865 - 5869
Database
ISI
SICI code
0021-8979(20001115)88:10<5865:HETIA>2.0.ZU;2-H
Abstract
The energy distribution of electrons that were transported through a thin i ntrinsic AlN film was directly measured as a function of the applied field. The measurements were realized by extracting the electrons into vacuum thr ough a semitransparent Au contact and measuring their energies using an ele ctron spectrometer. At moderate applied fields (100 kV/cm), the energy dist ribution was found to follow a Maxwellian model corresponding to a temperat ure of 2700 K and a drift component below the spectrometer resolution. At h igher fields, intervalley scattering was evidenced by the presence of a sec ond peak at 0.7 eV. This coincides well with the energy position of the LM valleys in AlN. (C) 2000 American Institute of Physics. [S0021-8979(00)0912 2-2].