Freestanding carbon nanotube films were created by sublimating decompositio
n of silicon carbide films, which were grown on thin silicon-on-insulator (
SOI) substrates by chemical vapor deposition with alternating gas supply of
SiH2Cl2 and C2H2. The sublimating decomposition of silicon carbide is perf
ormed by annealing the SIC film at 1600 degreesC in vacuum (1 x 10(-2) Pa).
The carbon nanotubes were highly oriented perpendicular to the single-crys
tal SIC(111) film.