Creation of highly oriented freestanding carbon nanotube film by sublimating decomposition of silicon carbide film

Citation
T. Shimizu et al., Creation of highly oriented freestanding carbon nanotube film by sublimating decomposition of silicon carbide film, JPN J A P 2, 39(10B), 2000, pp. L1057-L1059
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
10B
Year of publication
2000
Pages
L1057 - L1059
Database
ISI
SICI code
0021-4922(20001015)39:10B<L1057:COHOFC>2.0.ZU;2-8
Abstract
Freestanding carbon nanotube films were created by sublimating decompositio n of silicon carbide films, which were grown on thin silicon-on-insulator ( SOI) substrates by chemical vapor deposition with alternating gas supply of SiH2Cl2 and C2H2. The sublimating decomposition of silicon carbide is perf ormed by annealing the SIC film at 1600 degreesC in vacuum (1 x 10(-2) Pa). The carbon nanotubes were highly oriented perpendicular to the single-crys tal SIC(111) film.