Temperature dependence of high field transport in ZnS

Citation
H. Zhao et al., Temperature dependence of high field transport in ZnS, CZEC J PHYS, 50(10), 2000, pp. 1159-1167
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
CZECHOSLOVAK JOURNAL OF PHYSICS
ISSN journal
0011-4626 → ACNP
Volume
50
Issue
10
Year of publication
2000
Pages
1159 - 1167
Database
ISI
SICI code
0011-4626(200010)50:10<1159:TDOHFT>2.0.ZU;2-X
Abstract
High field transport process in ZnS in the temperature range of (10-500) K was simulated by help of Monte Carlo method. The band structure of ZnS is d escribed by analytical fitting of real band structure. Phonon scattering, s patial charge scattering, and impact ionization process are included in the simulation. The phonon scattering rates at different temperatures are calc ulated and compared. The transient acceleration time of electrons in ZnS is found to be temperature-in-dependent. We attribute this result to the comp ensation of two opposite factors in ZnS. Average energy of electrons decrea ses with temperature.