A transient analysis of Te doped GaSb melt growth process is performed usin
g finite element method. The solute concentration at the growth interface i
ncreases with time because of k < 1. The growth interface shape becomes it
little hat at the beginning of the growth compared with the initial shape.
Radial segregation occurs even under the <mu>g condition. This segregation
increases with the increase of gravity when gravity is small, and reaches a
maximum at g = 10(-3) for our system.