Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity

Citation
Yc. Liu et al., Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity, CHIN PHYS L, 17(10), 2000, pp. 775-777
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256-307X → ACNP
Volume
17
Issue
10
Year of publication
2000
Pages
775 - 777
Database
ISI
SICI code
0256-307X(2000)17:10<775:CAOTVB>2.0.ZU;2-M
Abstract
A transient analysis of Te doped GaSb melt growth process is performed usin g finite element method. The solute concentration at the growth interface i ncreases with time because of k < 1. The growth interface shape becomes it little hat at the beginning of the growth compared with the initial shape. Radial segregation occurs even under the <mu>g condition. This segregation increases with the increase of gravity when gravity is small, and reaches a maximum at g = 10(-3) for our system.