Scanning tunneling microscopy studies of ultrathin gate oxide films grown on highly B-doped Si(100) substrates

Citation
Q. Cai et al., Scanning tunneling microscopy studies of ultrathin gate oxide films grown on highly B-doped Si(100) substrates, J VAC SCI B, 18(5), 2000, pp. 2384-2387
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2384 - 2387
Database
ISI
SICI code
1071-1023(200009/10)18:5<2384:STMSOU>2.0.ZU;2-4
Abstract
In this work ultrahigh-vacuum scanning tunneling microscopy (STM) is used t o investigate ultrathin oxide films grown thermally by in situ dry oxidatio n of clean highly B-doped Si(100) substrates. On a clean starting surface, STM images reveal a special reconstruction induced by boron accumulation. T he step structure of the substrate persists and can be recognized on the ul trathin oxide films, indicating layer-by-layer oxidation. The surface rough ness is observed to increase upon oxidation, showing what appears in the ST M image (at certain bias voltages) as both bright spots and dark holes. The se oxidation-induced features also affect the formation of void structures when the oxide films are heated up to 700-750 degreesC. At the early stage of oxidation on the clean substrates, it is found that boron-induced recons truction may have an effect on the formation of missing-dimer defects. (C) 2000 American Vacuum Society. [S0734-211X(00)02705-0].