A study of bisazido(dimethylaminopropyl)gallium as a precursor for the OMVPE of gallium nitride thin films in a cold-wall reactor system under reduced pressure

Citation
A. Devi et al., A study of bisazido(dimethylaminopropyl)gallium as a precursor for the OMVPE of gallium nitride thin films in a cold-wall reactor system under reduced pressure, CHEM VAPOR, 6(5), 2000, pp. 245-252
Citations number
45
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
CHEMICAL VAPOR DEPOSITION
ISSN journal
0948-1907 → ACNP
Volume
6
Issue
5
Year of publication
2000
Pages
245 - 252
Database
ISI
SICI code
0948-1907(200010)6:5<245:ASOBAA>2.0.ZU;2-I
Abstract
The use of alternative nitrogen sources for growing GaN materials by organo metallic vapor phase epitaxy (OMVPE) is being continuously investigated in the hope of achieving device-quality films under moderate conditions, in co mparison to conventional methods. Employing the single molecule precursor ( N-3)(2)Ga[(CH2)(3)NMe2], and using a cold-wall CVD reactor, epitax ial film s of GaN, transparent in appearance and stoichiometric in composition, were deposited on c-plane sapphire, in the absence of ammonia, above 1073 K, un der low pressures (between 0.080 and 100.0 mbar). Dense, amorphous, and ver y smooth films were grown at temperatures as low as 773 K. The influence of substrate temperature, reactor pressure, and the effect of small quantitie s of additional ammonia, on the growth rate and the film properties, were s tudied in some detail. The films were characterized by high-resolution X-ra y diffraction (XRD) (e.g., full width at half maximum (FWHM) of the 0002 Ga N rocking curve of 130 arcsec), X-ray reflectometry, scanning electron micr oscopy (SEM), atomic force microscopy (AFM) (root mean square roughness of 1.9 nm), X-ray photoelectron spectroscopy (XPS), Auger electron spectroscop y (AES), Rutherford backscattering (RBS) (Ga/N = 1:1 +/- 0.05), and photolu minescence (PL) measurements (band edge luminescence at 3.45 eV and FWHM of 0.22 eV at 300 K).