Superlinear photoluminescence intensity observed in pump-probe experimentsin GaAs/Ga1-xAlxAs heterojunctions

Citation
Jx. Shen et al., Superlinear photoluminescence intensity observed in pump-probe experimentsin GaAs/Ga1-xAlxAs heterojunctions, PHYS ST S-B, 221(1), 2000, pp. 545-548
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
0370-1972 → ACNP
Volume
221
Issue
1
Year of publication
2000
Pages
545 - 548
Database
ISI
SICI code
0370-1972(200009)221:1<545:SPIOIP>2.0.ZU;2-2
Abstract
We studied the superlinearity of the photoluminescence intensity and its te mperature dependence in GaAs/Ga1-xAlxAs heterojunctions by means of pump-pr obe experiments. The photoluminescence intensity of the second laser pulse increases drastically when the heterojunction is pre-excited by a short las er pulse. We attribute this superlinearity to the vertical transport of the photoexcited carriers driven by the interface electric field, and the subs equent bimolecular exciton formation.