The charge and behavior of flaked particles in tungsten dry etching equipment examined by using particle radar

Citation
N. Ito et al., The charge and behavior of flaked particles in tungsten dry etching equipment examined by using particle radar, NEC RES DEV, 41(4), 2000, pp. 341-345
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
NEC RESEARCH & DEVELOPMENT
ISSN journal
0547-051X → ACNP
Volume
41
Issue
4
Year of publication
2000
Pages
341 - 345
Database
ISI
SICI code
0547-051X(200010)41:4<341:TCABOF>2.0.ZU;2-U
Abstract
An in situ particle detection system (Particle Radar double dagger), which can measure the trajectory of a single flaked particle by using a laser lig ht scattering method, is applied to tungsten etch-back equipment to study h ow to design particle-free equipment and the process. Reciprocating motion is used to trap particles near the anode, so that particles are not present near a wafer during etching. By shutting off the RF power, the particles t rapped near the anode fly to the chamber wall, just as residual plasma pote ntial. Next, the particles are attracted to the wafer by its residual self- bias voltage. Such a transport path of the particles suggests that they are charged positive. On the basis of this information, the bias electrodes we re installed in the process chamber and a negative voltage was applied. The results show a capacity for the electrodes to attract particles.