GaAs etch rate enhancement with SF6 addition to BCl3 plasmas

Citation
Kj. Nordheden et al., GaAs etch rate enhancement with SF6 addition to BCl3 plasmas, J ELCHEM SO, 147(10), 2000, pp. 3850-3852
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics","Material Science & Engineering
Journal title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
ISSN journal
0013-4651 → ACNP
Volume
147
Issue
10
Year of publication
2000
Pages
3850 - 3852
Database
ISI
SICI code
0013-4651(200010)147:10<3850:GEREWS>2.0.ZU;2-K
Abstract
A dramatic increase in the GaAs etch rate has been observed with the additi on of SF6 to BCl3 plasmas. The etch rate increases from 70 Angstrom/min in pure BCl3 to 4000 Angstrom/min with 70% SF6 in the total flow. Optical emis sion intensities of both molecular and atomic chlorine were observed to inc rease with SF6 addition, and the peak intensity of the atomic chlorine emis sion coincided with the peak in the etch rate. Argon was added to the mixtu re as an actinometer, and the argon emission intensity at 750 nm increased significantly with the addition of SF6. However, microwave measurements ind icated that the average electron density decreases with increasing SF6 addi tion. It is believed that the increased production of etch species is due t o an increase in the average electron temperature as a result of electron a ttachment heating. (C) 2000 The Electrochemical Society. S0013-4651(99)12-0 83-4. All rights reserved.