Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layerson InP substrates

Authors
Citation
K. Oe, Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layerson InP substrates, J CRYST GR, 219(1-2), 2000, pp. 10-16
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
219
Issue
1-2
Year of publication
2000
Pages
10 - 16
Database
ISI
SICI code
0022-0248(200010)219:1-2<10:LMVEGO>2.0.ZU;2-V
Abstract
InGaAs epitaxial growth on InP substrates at low temperatures (below 560 de grees C) was examined by low-pressure metalorganic vapor-phase epitaxy usin g TMIn, TEGa, and TBAs as growth precursors in a horizontal reactor. It was not possible to grow InGaAs layer below 480 degrees C under usual growth c onditions, and the limiting factor to lower the growth temperature in this growth system is found to be the decomposition of TEGa in the presence of T MIn. A new method in which InP dummy wafer is introduced upstream from the substrate in the gas flow to decompose the TEGa is successfully applied to obtain InGaAs epitaxial layers at lower growth temperatures. InGaAs layers of good optical quality were grown even at 420 degrees C. No observable dif ference in the amount of carbon than in the bulk substrate was found in the InGaAs layer grown at 420 degrees C by second ion mass spectroscopy measur ement. (C) 2000 Elsevier Science B.V. All rights reserved.