MOSFET statistical modeling method using an intermediate model

Citation
M. Kondo et al., MOSFET statistical modeling method using an intermediate model, ELEC C JP 3, 84(1), 2001, pp. 57-66
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART III-FUNDAMENTAL ELECTRONIC SCIENCE
ISSN journal
1042-0967 → ACNP
Volume
84
Issue
1
Year of publication
2001
Pages
57 - 66
Database
ISI
SICI code
1042-0967(2001)84:1<57:MSMMUA>2.0.ZU;2-J
Abstract
A method for modeling the variations in MOSFET performance systematically i s proposed in this paper. A characteristic of this method is that the relat ionships between the model parameters and a small number of physical quanti ties governing MOSFET performance are analyzed statistically using intermed iate models. The variations of individual physical quantities are summarize d in a form called an intermediate statistical model. Necessary and suffici ent specific statistical information is reflected by the intermediate stati stical model. A designer can perform transformations of intermediate statis tical models to be incorporated into a MOSFET model desired. Characteristic s of an intermediate statistical model can be accurately reflected with res pect to many models currently in use. In addition, worst-case parameters ca n be easily extracted. Variations of a 0.3-mu m CMOS process are modeled ex perimentally as an example to verify the efficacy of this method. (C) 2000 Scripta Technica.