Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe s
ubstrates. These mirrors are composed of 10.5 and 20 pairs of alternating q
uarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the waveleng
ths of 530 and 560 nm, respectively, which fall in the transparency region
of the substrate. These structures were studied by low-temperature cathodol
uminescence, atomic-force microscopy, and transmission electron microscopy.
The maximum of the reflection coefficient was 78% for a 20-pair mirror and
66% for a 10.5-pair mirror. This result is interpreted in terms of a model
that takes into account the roughness of the interlayer boundaries. (C) 20
00 MAIK "Nauka/Interperiodica".