ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates

Citation
Vi. Kozlovskii et al., ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates, SEMICONDUCT, 34(10), 2000, pp. 1186-1192
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
1063-7826 → ACNP
Volume
34
Issue
10
Year of publication
2000
Pages
1186 - 1192
Database
ISI
SICI code
1063-7826(2000)34:10<1186:ZDBMGB>2.0.ZU;2-F
Abstract
Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe s ubstrates. These mirrors are composed of 10.5 and 20 pairs of alternating q uarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the waveleng ths of 530 and 560 nm, respectively, which fall in the transparency region of the substrate. These structures were studied by low-temperature cathodol uminescence, atomic-force microscopy, and transmission electron microscopy. The maximum of the reflection coefficient was 78% for a 20-pair mirror and 66% for a 10.5-pair mirror. This result is interpreted in terms of a model that takes into account the roughness of the interlayer boundaries. (C) 20 00 MAIK "Nauka/Interperiodica".