RHEED intensity oscillations for the stoichiometric growth of SrTiO3 thin films by reactive molecular beam epitaxy

Citation
Jh. Haeni et al., RHEED intensity oscillations for the stoichiometric growth of SrTiO3 thin films by reactive molecular beam epitaxy, J ELECTROCE, 4(2-3), 2000, pp. 385-391
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTROCERAMICS
ISSN journal
1385-3449 → ACNP
Volume
4
Issue
2-3
Year of publication
2000
Pages
385 - 391
Database
ISI
SICI code
1385-3449(200006)4:2-3<385:RIOFTS>2.0.ZU;2-6
Abstract
The growth of high quality multicomponent oxide thin films by reactive mole cular beam epitaxy (MBE) requires precise composition control. We report th e use of in situ reflection high-energy electron diffraction (RHEED) for th e stoichiometric deposition of SrTiO3 (1 0 0) from independent strontium an d titanium sources. By monitoring changes in the RHEED intensity oscillatio ns as monolayer doses of strontium and titanium are sequentially deposited, the Sr:Ti ratio can be adjusted to within 1% of stoichiometry. Furthermore , the presence of a beat frequency in the intensity oscillation envelope al lows the adjustment of the strontium and titanium fluxes so that a full mon olayer of coverage is obtained with each shuttered dose of strontium or tit anium. RHEED oscillations have also been employed to determine the doping c oncentration in barium- and lanthanum-doped SrTiO3 films.