Detection of interface states correlated with SiO2/Si(111) interface structures

Citation
N. Watanabe et al., Detection of interface states correlated with SiO2/Si(111) interface structures, APPL SURF S, 166(1-4), 2000, pp. 460-464
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
460 - 464
Database
ISI
SICI code
0169-4332(20001009)166:1-4<460:DOISCW>2.0.ZU;2-P
Abstract
The interface state densities near the midgap of an atomically flat Si(111) surface were measured as oxidation progressed. It was found that an anomal ous decrease in interface state: densities near the midgap was observed per iodically in accordance with periodic changes in interface structures with the progress of oxidation. Therefore, interface state densities near the mi dgap closely related with interface structures were found. It is deduced fr om the correlation among the interface and surface structures and interface state density near the midgap, of Si, that isolated Si3+ species is the po ssible origin of the interface states near the midgap of Si. (C) 2000 Elsev ier Science B.V. All rights reserved.