The interface formation of PTCDA on Se-modified GaAs(100) surfaces

Citation
S. Park et al., The interface formation of PTCDA on Se-modified GaAs(100) surfaces, APPL SURF S, 166(1-4), 2000, pp. 376-379
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
166
Issue
1-4
Year of publication
2000
Pages
376 - 379
Database
ISI
SICI code
0169-4332(20001009)166:1-4<376:TIFOPO>2.0.ZU;2-8
Abstract
The interface formation between the molecular beam deposited molecular semi conductor, 3,3,9,10-perylenetetracarboxylic dianhydride (PTCDA), and Se-tre ated GaAs(100)-(2 x 1) surface was investigated by soft X-ray photoemission spectroscopy (SXPS) using synchrotron radiation. For room temperature grow th, no chemical bond is observed. At elevated sample temperature up to 350 degrees C after the growth, all PTCDA except one monolayer desorbs from the surface. A loss of Se dimer atoms on top of the surface, which is in accor dance with the number of anhydride oxygen atoms of PTCDA in a unit cell, in dicates the reaction with PTCDA molecules upon annealing. The growth mode a nd the band banding upon PTCDA deposition on Se-treated GaAs(100) are also discussed. (C) 2000 Elsevier Science B.V. All rights reserved.