In this paper, the influence of substrate d.c. bias voltage on growth of cu
bic boron nitride (c-BN) films by radio frequency (RF) sputter is reported.
Boron nitride films were deposited on p-type Si(100) wafers (8-15 Omega cm
) which were biased by the d.c. voltage negatively with respect to ground.
The sputtering target was hot pressed hexagonal boron nitride of 4 N purity
. The sputtering gas was the mixture of nitrogen and argon. The boron nitri
de films were characterized with Fourier transform infrared (FTIR) spectra.
At a RF power of 360 W and substrate d.c. bias voltage of - 200 V, the fil
ms contained almost pure phase c-BN. It was shown that different substrate
d.c. bias voltages resulted in different cubic phase contents in the c-BN f
ilms. (C) 2000 Elsevier Science S.A. All rights reserved.