H. Zhao et al., Analytical band model in Monte Carlo simulation of electric transport in ZnS thin film electroluminescent devices, ACT PHY P A, 98(1-2), 2000, pp. 123-130
In this paper, an analytical band model is introduced in Monte Carlo simula
tion of electric transport process in thin film electroluminescent devices.
The band structure of ZnS calculated from the empirical pseudopotential me
thod is fitted by using polynomials. The density of states and scattering r
ates are also calculated from these polynomials. Based on these results, th
e electric transport process in ZnS-type thin film electroluminescent devic
es is simulated through the Monte Carlo method. By comparison with others,
this model is as fast as the nonparabolic model and as accurate as the full
band model. Furthermore, the influence of the band model on the simulation
results is also investigated. We show that the dispersion relation and den
sity of states are all important in the simulation.