Analytical band model in Monte Carlo simulation of electric transport in ZnS thin film electroluminescent devices

Citation
H. Zhao et al., Analytical band model in Monte Carlo simulation of electric transport in ZnS thin film electroluminescent devices, ACT PHY P A, 98(1-2), 2000, pp. 123-130
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
0587-4246 → ACNP
Volume
98
Issue
1-2
Year of publication
2000
Pages
123 - 130
Database
ISI
SICI code
0587-4246(200007/08)98:1-2<123:ABMIMC>2.0.ZU;2-0
Abstract
In this paper, an analytical band model is introduced in Monte Carlo simula tion of electric transport process in thin film electroluminescent devices. The band structure of ZnS calculated from the empirical pseudopotential me thod is fitted by using polynomials. The density of states and scattering r ates are also calculated from these polynomials. Based on these results, th e electric transport process in ZnS-type thin film electroluminescent devic es is simulated through the Monte Carlo method. By comparison with others, this model is as fast as the nonparabolic model and as accurate as the full band model. Furthermore, the influence of the band model on the simulation results is also investigated. We show that the dispersion relation and den sity of states are all important in the simulation.